• 1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices
  • 1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices
  • 1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices
1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices

1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices

Product Details:

Place of Origin: China
Brand Name: BonTek
Certification: ISO:9001
Model Number: Sapphire (Al2O3)

Payment & Shipping Terms:

Minimum Order Quantity: 5 Pieces
Price: Negotiable
Packaging Details: Cassette, Jar, Film package
Delivery Time: 1-4 weeks
Payment Terms: T/T
Supply Ability: 10000 pieces/Month
Get Best Price Contact Now

Detail Information

Material: Sapphire Wafer Orientation: C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10]
Diameter: Φ1inch To 8inch Refractive Index: 1.75449 (o) 1.74663 (e) At 1.06 Microns
Reflection Loss: At 1.06 Microns (2 Surfaces) For O-ray - 11.7%; For E-ray - 14.2% Index Of Absorption: 0.3 X 10-3 Cm-1 At 2.4 Microns
Specific Heat Capacity: 419 J/(kg X K) Dielectric Constant: 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) At 1MHz
High Light:

8'' Sapphire Wafer

,

Al2O3 8 inch wafer

,

1'' Sapphire Wafer

Product Description

Φ1'' to 8'' Sapphire Wafer for High-Frequency High-Power High-Temperature Devices

 

Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation. Due to its excellent mechanical and chemical characteristics, the sapphire wafer plays an important role in the optoelectronics industry and widely used in precision mechanical parts and vacuum equipment.

 

Applications of Sapphire Wafer

- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode

 

1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices 01'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices 11'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices 2

 

Growth

Kyroplous

Diameter

Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 5"

Size

10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm

Thickness

0.43 mm / 0.5 mm / 1 mm

Surface

one side / two sides epi polished

Roughness

Ra ≤ 5 A

Package

Single wafer container or Ampak cassette

 

Chemical formula

Al2O3

Crystal structure

Hexagonal

Lattice constant

4.77 A

Hardness

9

Thermal conductivity

46 W / mk

Dielectric constant

11.58

Refractive index

1.768


1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices 3

 

Acceptance Check

1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices 4

 

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

 

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

 

3. Please open the vacuum package in a clean room when the products are to be applied.

 

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.

Want to Know more details about this product
I am interested in 1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices could you send me more details such as type, size, quantity, material, etc.
Thanks!
Waiting for your reply.