C-plane 0001 Sapphire Wafer Al2O3 Substrate For Infrared Window LED And Blue Laser
Product Details:
Place of Origin: | China |
Brand Name: | BonTek |
Certification: | ISO:9001 |
Model Number: | Sapphire (Al2O3) |
Payment & Shipping Terms:
Minimum Order Quantity: | 5 Pieces |
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Price: | Negotiable |
Packaging Details: | Cassette, Jar, Film package |
Delivery Time: | 1-4 weeks |
Payment Terms: | T/T |
Supply Ability: | 10000 pieces/Month |
Detail Information |
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Material: | Sapphire Wafer | Growth: | Kyropoulos Method |
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Melting Point: | 2040 °C | Thermal Conductivity: | 27.21 W/(m X K) At 300 K |
Thermal Expansion: | 5.6 X 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) X 10 -6 /K | Hardness: | Knoop 2000 Kg/mm 2 With 2000g Indenter |
Specific Heat Capacity: | 419 J/(kg X K) | Dielectric Constant: | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) At 1MHz |
High Light: | C-plane 0001 Sapphire Wafer,Infrared Window LED Al2O3 Substrate,Blue Laser Sapphire Wafer |
Product Description
C-plane 0001 Sapphire Wafer Al2O3 Substrate for Infrared Window LED and Blue Laser
Al2O3 single crystal (Sapphire, also known as white stones, sapphire) has good thermal properties, excellent electrical characteristics and dielectric properties, and anti-chemicalcorrosion, it is high temperature, thermal conductivity, high hardness, infrared transparent, chemically stable good. Widely used in high-temperature infrared window materials and III-V nitride epitaxial film substrate and a variety of materials to meet the growing blue, purple, white light-emitting diode (LED) and blue laser (LD) needs, BonTek specializing in the production of high quality polished sapphire crystal and epitaxial substrates will provide you with a lot of high quality and low price monocrystalline substrate.
OPTICAL PROPERTIES of SAPPHIRE Al2O3 | |
Transmission Range |
0.17 to 5.5 microns |
Refractive Index |
1.75449 (o) 1.74663 (e) at 1.06 microns |
Reflection Loss |
at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% |
Index of Absorption |
0.3 x 10-3 cm-1 at 2.4 microns |
dN/dT |
13.7 x 10-6 at 5.4 microns |
dn/dm = 0 |
1.5 microns |
PHYSICAL PROPERTIES of SAPPHIRE Al2O3 | |
Density |
3.97 g/cm3 |
Melting Point |
2040 degrees C |
Thermal Conductivity |
27.21 W/(m x K) at 300 K |
Thermal Expansion |
5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
Hardness |
Knoop 2000 kg/mm 2 with 2000g indenter |
Specific Heat Capacity |
419 J/(kg x K) |
Dielectric Constant |
11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
Young's Modulus (E) |
335 GPa |
Shear Modulus (G) |
148.1 GPa |
Bulk Modulus (K) |
240 GPa |
Elastic Coefficients |
C11=496 C12=164 C13=115 |
Apparent Elastic Limit |
275 MPa (40,000 psi) |
Poisson Ratio |
0.25 |
Orientation |
R-plane, C-plane, A-plane, M-plane or a specified orientation |
Orientation Tolerance |
± 0.3° |
Diameter |
2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others |
Diameter Tolerance |
0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches |
Thickness |
0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others; |
Thickness Tolerance |
25μm |
Primary Flat Length |
16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches |
Primary Flat Orientation |
A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2° |
Acceptance Check
1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.
2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.
3. Please open the vacuum package in a clean room when the products are to be applied.
4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.