• Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant
  • Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant
Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant

Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant

Product Details:

Place of Origin: China
Brand Name: BonTek
Certification: ISO:9001
Model Number: Sapphire (Al2O3)

Payment & Shipping Terms:

Minimum Order Quantity: 5 Pieces
Price: Negotiable
Packaging Details: Cassette, Jar, Film package
Delivery Time: 1-4 weeks
Payment Terms: T/T
Supply Ability: 10000 pieces/Month
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Detail Information

Material: Sapphire Windows Growth: Kyropoulos Method
Melting Point: 2040 °C Thermal Conductivity: 27.21 W/(m X K) At 300 K
Thermal Expansion: 5.6 X 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) X 10 -6 /K Hardness: Knoop 2000 Kg/mm 2 With 2000g Indenter
Specific Heat Capacity: 419 J/(kg X K) Dielectric Constant: 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) At 1MHz
Highlight:

Semiconductor Piezoelectric Wafer

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Sapphire Windows Piezoelectric Wafer

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Scratching Resistant Sapphire Wafer

Product Description

Semiconductor Sapphire Wafer Sapphire Windows Piezoelectric Wafer

 

Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.

 

Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant 0Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant 1Sapphire Windows Piezoelectric Wafer Semiconductor Scratching Resistant 2

 

Item

3-inch C-plane(0001) 500μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

C-plane(0001)

C-plane off-angle toward M-axis 0.2 +/- 0.1°

Diameter

76.2 mm +/- 0.1 mm

Thickness

500 μm +/- 25 μm

Primary Flat Orientation

A-plane(11-20) +/- 0.2°

Primary Flat Length

22.0 mm +/- 1.0 mm

Single Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(SSP)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(DSP)

Back Surface

Epi-polished, Ra < 0.2 nm (by AFM)

TTV

< 15 μm

BOW

< 15 μm

WARP

< 15 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

 

Item

4-inch C-plane(0001) 650μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

C-plane(0001)

C-plane off-angle toward M-axis 0.2 +/- 0.1°

Diameter

100.0 mm +/- 0.1 mm

Thickness

650 μm +/- 25 μm

Primary Flat Orientation

A-plane(11-20) +/- 0.2°

Primary Flat Length

30.0 mm +/- 1.0 mm

Single Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(SSP)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(DSP)

Back Surface

Epi-polished, Ra < 0.2 nm (by AFM)

TTV

< 20 μm

BOW

< 20 μm

WARP

< 20 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

 

Item

6-inch C-plane(0001) 1300μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

C-plane(0001)

C-plane off-angle toward M-axis 0.2 +/- 0.1°

Diameter

150.0 mm +/- 0.2 mm

Thickness

1300 μm +/- 25 μm

Primary Flat Orientation

A-plane(11-20) +/- 0.2°

Primary Flat Length

47.0 mm +/- 1.0 mm

Single Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(SSP)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(DSP)

Back Surface

Epi-polished, Ra < 0.2 nm (by AFM)

TTV

< 25 μm

BOW

< 25 μm

WARP

< 25 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

 

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