• 2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations
  • 2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations
2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations

2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations

Product Details:

Place of Origin: China
Brand Name: BonTek
Certification: ISO:9001
Model Number: Sapphire (Al2O3)

Payment & Shipping Terms:

Minimum Order Quantity: 5 Pieces
Price: Negotiable
Packaging Details: Cassette, Jar, Film package
Delivery Time: 1-4 weeks
Payment Terms: T/T
Supply Ability: 10000 pieces/Month
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Detail Information

Material: Sapphire Wafer Type: Single Crystal
Color: White / Red / Blue Growth Method: Horizontally Directed Crystallization (HDC)
Melting Point: 2040 Degrees C Young's Modulus (E): 335 GPa
Shear Modulus (G): 148.1 GPa Bulk Modulus (K): 240 GPa
Highlight:

Sapphire Single Crystal Wafer

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2 Inch Single Crystal Wafer

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HDC Sapphire Wafer

Product Description

2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations

 

Sizes: 2 ", 4 ", 6 "and cut small pieces;

C direction, M direction, R direction; Single side polish, double side polish;

Thickness: 100um, 280um, 300um, 350um, 430um, 500um, 650um, 1mm;

Sapphire is a single crystal of alumina and is the second hardest material in nature, after diamond. Sapphire has good light transmittance, high strength, collision resistance, wear resistance, corrosion resistance and resistance to high temperature and high pressure, biocompatibility, can be made into various shapes of objects. It is an ideal substrate material for making semiconductor optoelectronic devices.

Application: Sapphire single crystal is an excellent multifunctional material. Can be widely used in industry, national defense and scientific research and other fields (such as high temperature resistant infrared window). It is also a widely used single crystal substrate material. Is the current blue, purple, white light emitting diode (LED) and blue laser (LD) industry of the first choice substrate (need to epitaxy gallium nitride film layer on sapphire substrate), is also an important superconducting thin film substrate. In addition to making Y- series, La- series and other high temperature superconducting thin films, it can also be used to grow new practical MgB2 (magnesium diboride) superconducting thin films.

 

2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations 02 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations 12 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations 2

 

OPTICAL PROPERTIES

Transmission

0.17 to 5.5 um

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 um

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Absorption Index

0.3 x 10-3 cm-1 at 2.4 um

dN/dT

13.7 x 10-6 at 5.4 um

dn/dm = 0

1.5 um

 

Orientation

R-plane, C-plane, A-plane, M-plane or a specified orientation

Orientation Tolerance

± 0.3°

Diameter

2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others

Diameter Tolerance

0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches

Thickness

0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;

Thickness Tolerance

25μm

Primary Flat Length

16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches

Primary Flat Orientation

A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°

TTV

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

BOW

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

Front Surface

Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)

Back Surface

Fine ground (Ra=0.6μm~1.4μm) or Epi-polished

Packaging

Packaged in a class 100 clean room environment

 

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