State - Of - The - Art Piezoelectric Wafer Fabrication For MEMS And SAW Devices Advanced Processing Capabilities For Results
Product Details:
Place of Origin: | China |
Brand Name: | CQTGROUP |
Certification: | ISO:9001, ISO:14001 |
Model Number: | Chip Foundry Services |
Payment & Shipping Terms:
Minimum Order Quantity: | 1 pcs |
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Price: | Negotiable |
Packaging Details: | Cassette/ Jar package, vaccum sealed |
Delivery Time: | 1-4 weeks |
Payment Terms: | T/T |
Supply Ability: | 10000 pcs/Month |
Detail Information |
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Product: | Chip Foundry Services | Materials: | LiNbO₃,LiTaO₃,Crystal Quartz,Glass,Sapphire Etc. |
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Service: | Lithography,Etching,Coating, Bonding | Lithography: | EBL Proximity Lithograph OStepper Lithography |
Supporting Equipment: | Grinding/Thinning/Polishing/ Machines Etc. | Bonding:: | Anodic,Eutectic,Adhesive,Wire Bonding |
Highlight: | Advanced Processing Capabilities Piezoelectric Wafer,MEMS Piezoelectric Wafer,SAW Devices Piezoelectric Wafer |
Product Description
State-of-the-Art Piezoelectric Wafer Fabrication for MEMS and SAW Devices Advanced Processing Capabilities for Results
We specialize in providing comprehensive chip foundry services, catering to clients who require high-quality wafer processing and fabrication. By simply providing design schematics and specifications, we deliver tailored solutions that meet your exact needs. Our extensive range of wafers includes Lithium Niobate (LiNbO₃), Lithium Tantalate (LiTaO₃), Single Crystal Quartz, Fused Silica Glass, Borosilicate Glass (BF33), Soda-Lime Glass, Silicon Wafers, and Sapphire, ensuring versatility for diverse applications.
Advanced Wafer Materials Portfolio
Our expertise spans industry-standard and exotic substrates:
- Lithium Niobate (LiNbO₃, 4"-6" wafers)
- Lithium Tantalate (LiTaO₃, Z-cut/Y-cut)
- Single Crystal Quartz (AT-cut/SC-cut)
- Fused Silica (Corning 7980 equivalent)
- Borosilicate Glass (BF33/Schott Borofloat®)
- Silicon (100/111 orientation, 200mm max)
- Sapphire (C-plane/R-plane, 2"–8")
Core Fabrication Technologies
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Lithography
- Electron Beam Lithography (EBL, 10nm resolution)
- Stepper Lithography (i-line, 365nm)
- Proximity Mask Aligner (5μm alignment accuracy)
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Etching
- ICP-RIE (SiO₂/Si etch rate 500nm/min)
- DRIE (Aspect ratio 30:1, Bosch process)
- Ion Beam Etching (Angular uniformity <±2°)
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Thin-Film Deposition
- ALD (Al₂O₃/HfO₂, <1nm uniformity)
- PECVD (SiNₓ/SiO₂, stress-controlled)
- Magnetron Sputtering (Au/Pt/Ti, 5nm–1μm)
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Wafer Bonding
- Anodic Bonding (Glass-to-Si, 400°C/1kV)
- Eutectic Bonding (Au-Si, 363°C)
- Adhesive Bonding (BCB/SU-8, <5μm warpage)
Supporting Process Infrastructure
- Precision Grinding (TTV <2μm)
- CMP Polishing (Ra <0.5nm)
- Laser Dicing (50μm kerf width)
- 3D Metrology (White-light interferometry)